@InProceedings{CostaFoBoPeAbSoRa:2020:ShHaOs,
               author = "Costa, I. F. and Fonseca, L. M. B. da and Bolagños, K. and Peres, 
                         M. L. and Abramof, Eduardo and Soares, A. W. and Rappl, Paulo 
                         Henrique de Oliveira",
          affiliation = "{Universidade Federal de Itajub{\'a} (UNIFEI)} and {Universidade 
                         Federal de Itajub{\'a} (UNIFEI)} and {Universidade Federal de 
                         Itajub{\'a} (UNIFEI)} and {Universidade Federal de Itajub{\'a} 
                         (UNIFEI)} and {Instituto Nacional de Pesquisas Espaciais (INPE)} 
                         and {Universidade Federal de Itajub{\'a} (UNIFEI)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)}",
                title = "Shubnikov-de Haas Oscillations p-type PbTe Quantum Wells under 
                         illumination",
                 year = "2020",
         organization = "Encontro de Outono Sociedade Brasileira de F{\'{\i}}sica",
             abstract = "The lead telluride is a narrow gap semiconductor which the Fermi 
                         surface is composed by four equivalent ellipsoids of revolution 
                         with their axis along the <111> direction, responsible for its 
                         strong anisotropic of electronic masses. Those properties play an 
                         important role in the electronic transport in presence of the 
                         magnetic field [1]. Also, the narrow gap of PbTe allows this 
                         material to be used in the fabrication of infrared devices [2]. In 
                         this work, we present magnetoresistance (MR) measurements in 
                         p-type PbTe quantum wells (QW) with 8nm and 10nm width for 
                         magnetic field up to 9 T and for temperatures varying from 1.9 K 
                         to 50 K. Samples were grown using the molecular bean epitaxial 
                         technique providing high quality samples with high mobility. From 
                         our experimental curves we could observed very clear Shubnikov-de 
                         Haas Oscillations for the second-derivative of longitudinal 
                         component \𝑅\𝑥\𝑥 and transversal 
                         \𝑅\𝑥\𝑦 of the electrical resistance. 
                         The analysis of the experimental curves using Fast Fourier 
                         Transform (FFT) allowed us to obtain the cyclotronic masses and 
                         the carrier concentrations. Also, from Hall measurements, it was 
                         possible to compare the transport parameters obtained from the MR 
                         curves. By deriving the energy levels in the QW´s and calculating 
                         the Fermi energy, we found that only the first longitudinal valley 
                         is occupied. We also observed a splitting in the FFT curves that 
                         are not related to other valley contributions. We suggest that the 
                         Rashba effect is responsible for this effect due to the splitting 
                         of the Fermi surface energy [3].",
  conference-location = "Online",
      conference-year = "23 a 26 nov.",
        urlaccessdate = "28 abr. 2024"
}